Microscopy and Microanalysis

Paper

15 Jul 2003

Experience with the IBM sub-angstrom STEM

Abstract

No abstract available.

Paper

Graded electronic structure in a 3 nm strained Ge40Si60 quantum well

P.E. Batson, J.F. Morar

Physical Review Letters

Conference paper

High resolution EELS in the IBM sub-angstrom STEM

P.E. Batson

M&M 2006

Paper

Conduction bandstructure in strained silicon by spatially resolved electron energy loss spectroscopy

P.E. Batson

Ultramicroscopy

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Atomic resolution electronic structure in silicon-based semiconductors

P.E. Batson

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