PaperGraded electronic structure in a 3 nm strained Ge40Si60 quantum wellP.E. Batson, J.F. MorarPhysical Review Letters
PaperApplication of electron and ion beam analysis techniques to microelectronicsT.S. Kuan, P.E. Batson, et al.IBM J. Res. Dev
PaperSilicon L2,3 core absorption obtained at the buried Al/Si(111) interfaceP.E. BatsonPhysical Review B
PaperSub-aångstrom resolution using aberration corrected electron opticsP.E. Batson, N. Dellby, et al.Nature