R.T. Kerth, K. Jain, et al.
IEEE Electron Device Letters
Direct photoetching of various resists and polymers with a 193-nm ArF excimer laser has been demonstrated by imaging a mask through a projection lens. Feature sizes ranging from 2 to 20 μm have been cleanly etched in 1-μm-thick films.
R.T. Kerth, K. Jain, et al.
IEEE Electron Device Letters
M.R. Latta, R.V. Pole
Applied Optics
M.R. Latta, K. Jain
Optics Communications
S. Rice, K. Jain
Applied Physics A Solids and Surfaces