Publication
Journal of Applied Physics
Paper

Excimer laser projection photoetching

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Abstract

Direct photoetching of various resists and polymers with a 193-nm ArF excimer laser has been demonstrated by imaging a mask through a projection lens. Feature sizes ranging from 2 to 20 μm have been cleanly etched in 1-μm-thick films.

Date

01 Jan 1984

Publication

Journal of Applied Physics

Authors

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