Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Scanning-tunneling-microscopy images of the Si(111) 3 × 3 -Sb surface show a trigonal lattice of protrusions, with a characteristic dependence on bias voltage. When probing filled surface states, the protrusions consist of three topographic maxima, while probing empty surface states gives a single maximum. These observations are interpreted in terms of an Sb-trimer model, the structure of which is obtained through first-principles calculations. Charge-density contours show that the three maxima seen when probing filled states can be directly related to the positions of the Sb-trimer atoms. © 1990 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J.A. Barker, D. Henderson, et al.
Molecular Physics
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP