J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results. © 1988 The American Physical Society.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
J. Tersoff
Applied Surface Science
T. Schneider, E. Stoll
Physical Review B