Publication
Physical Review B
Paper

Evidence for the intrinsic nature of light-induced defects in undoped a-Si:H

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Abstract

Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si:H films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results. © 1988 The American Physical Society.

Date

15 May 1988

Publication

Physical Review B

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