Publication
Physical Review B
Paper

Evidence for a large valence-band offset at HgTe-CdTe heterojunctions

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Abstract

Most theoretical and experimental studies of HgTe-CdTe interfaces have found a valence-band offset of 20.35 eV, and in many cases much lower. Here it is suggested that the available theoretical calculations can equally well be interpreted as indicating a valence-band offset of nearly 0.5 eV, which is apparently consistent with the limited experimental evidence available. © 1989 The American Physical Society.

Date

15 Nov 1989

Publication

Physical Review B

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