About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Equilibrium crystal shape of silicon near (001)
Abstract
We calculate the equilibrium shape of a silicon crystal at orientations near (001), both at T=0 and at elevated temperature. Comparison with recent experiments shows that several topographic features observed on Si directly reflect the equilibrium shape. In particular, our results resolve an apparent discrepancy between theory and experiment, regarding faceting between regions of single-layer and double-layer steps. © 1993 The American Physical Society.