Epitaxy of silicon on nickel silicide

Abstract

Experiments involving the epitaxial growth of NiSi2 films on Si{111} and the subsequent growth of epitaxial Si films are described. Low-energy electron diffraction reveals that the latter films have a structure similar to that of a quenched Si{111}1×1 phase, albeit with considerable distortions, and have the same orientation as the original Si{111} substrate even when the silicide is inverted (type B). Heat treatments spur the diffusion of Si into the NiSi2 substrate and leave the surface covered with relatively thick Si islands before the fully bare NiSi2{111} surface is recovered. © 1985 The American Physical Society.