Bart Van Bilzen, P. Homm, et al.
Thin Solid Films
In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-Tc thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
Bart Van Bilzen, P. Homm, et al.
Thin Solid Films
A. Rüfenacht, P. Chappatte, et al.
Solid-State Electronics
G.J. Norga, A. Guiller, et al.
MRS Proceedings 2003
J.W. Seo, E.E. Fullerton, et al.
Journal of Physics Condensed Matter