Epitaxial silicon and germanium on buried insulator heterostructures and devices

The potential of silicon and germanium lattice matched epitaxial oxide multilayer heterostructures was analyzed via the realization of Ge on buried insulator field effect transistors. Hydrogen passivated Si(111) wafers were inserted into a molecular beam epitaxial (MBE) growth chamber. The working of field-effect transistors on germanium-on-insulator layers was also described. The results show that high quality heterostructures were grown by controlling the crystallization and roughening behavior of Si or Ge on oxide surfaces.