K.N. Tu, W.K. Chu, et al.
Thin Solid Films
Epitaxial nickel silicide layers have been formed by ion beam annealing of 300-400-Å Ni films on (001) Si with 300-400-ns pulses of H+ or Ba+ ions. Cellular structures were formed at an H+ energy density of 1.3 J/cm2 and a Ba+ energy density above about 0.7 J/cm2. At lower energy densities, uniform epitaxial layers of NiSi2 were formed, as indicated by both Rutherford backscattering channeling and transmission electron microscopy. With ion beam annealing, melting starts at the Ni/Si interface and epitaxy is found at energy densities well below that required to melt crystalline Si.
K.N. Tu, W.K. Chu, et al.
Thin Solid Films
J.W. Mayer, J.F. Ziegler, et al.
Journal of Applied Physics
Stella Q. Hong, Q.Z. Hong, et al.
Applied Physics Letters
J.J. Chu, L.J. Chen, et al.
Journal of Applied Physics