Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs

We present results of ensemble Monte Carlo simulations of the femtosecond relaxation of photoexcited electrons in bulk GaAs. Our results are in qualitative agreement with the experimental data of Rosker, Wise and Tang (1986) and show that the fast relaxation component (∼34 fs) is primarily due to Γ→L scattering with a minor contribution from electron-electron scattering. The intermediate relaxation component (∼160 fs) is a result of the energy loss of electrons in the Γ valley which occurs chiefly by polar optical phonon (POP) scattering. © 1988.