About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Solid State Electronics
Paper
Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs
Abstract
We present results of ensemble Monte Carlo simulations of the femtosecond relaxation of photoexcited electrons in bulk GaAs. Our results are in qualitative agreement with the experimental data of Rosker, Wise and Tang (1986) and show that the fast relaxation component (∼34 fs) is primarily due to Γ→L scattering with a minor contribution from electron-electron scattering. The intermediate relaxation component (∼160 fs) is a result of the energy loss of electrons in the Γ valley which occurs chiefly by polar optical phonon (POP) scattering. © 1988.