Energy Considerations in the Deposition of High-Quality Plasma-Enhanced CVD Silicon Dioxide

Abstract

Silicon dioxide films deposited from the plasma-enhanced chemical vapor deposition (PECVD) reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of temperature and radio frequency (RF) power on the deposition process. Increased RF power density yielded oxides which were structurally more relaxed and homogeneous. Temperature had a more significant effect on the impurity levels in the films. The combination of elevated power density with increased susceptor temperature resulted in the deposition of films of high physical integrity. © 1991, The Electrochemical Society, Inc. All rights reserved.