M. Eizenberg, K.N. Tu
Journal of Applied Physics
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.
M. Eizenberg, K.N. Tu
Journal of Applied Physics
A.W. Smith, M.I. Nathan, et al.
Journal of Applied Physics
T. Foster, D.K. Maude, et al.
Physica Scripta
D.K. Maude, J.C. Portal, et al.
Physical Review Letters