Conference paper
Complementary p- and n-channel quantum-well MI3SFET's
R.A. Kiehl, M.A. Olson, et al.
IEDM 1988
A novel method involving internal photoemission has been developed to determine the conduction band discontinuity Δ Ec of heterojunctions. The method is straightforward, accurate, and assumes minimum unknowns; and has been applied to GaAs/AlxGa1-xAs heterojunctions. We have found for x<0.4 that Δ Ec≅0.62 Δ Eg, where Δ Eg is the band-gap difference. For x>0.4, the apparent Δ Ec is considerably smaller.
R.A. Kiehl, M.A. Olson, et al.
IEDM 1988
M. Heiblum, M.I. Nathan, et al.
Solid-State Electronics
M. Heiblum, E. Calleja, et al.
Physical Review Letters
M.I. Nathan, S. Tiwari, et al.
Journal of Applied Physics