Investigation of band gap, band alignment and bonding states of the (Tb_xSc_1-x)₂O₃/ Si system

Abstract

The electrical and microstructural characteristics of (Tb xSc1-x)2O3 dielectric films (x=0, 0.5, 1) prepared by the molecular beam deposition technique on silicon substrates were investigated as a function of composition. X-ray photoelectron spectroscopy was used to determine the band gap, as well as the energy band alignment with Si and the chemical structure of the films. An interfacial layer formation between Si and the dielectric films was examined by high resolution TEM analysis. The electrical properties of MOS structures were correlated with the chemical bonding states of the films. ©The Electrochemical Society.