About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B - CMMP
Paper
Electronic structure of silicon carbide polytypes studied by soft x-ray spectroscopy
Abstract
The electronic structure of SiC polytypes is investigated with soft x-ray absorption (SXA) and emission (SXE) spectroscopy studying the local C p and Si (s + d) partial density of states (LPDOS) of n-doped cubic 3C-SiC and hexagonal 4H- and 6H-SiC. The shape and the energetic position of the occupied LPDOS of the valence band measured by nonresonantly excited SXE spectroscopy is nearly identical for the three polytypes, reflecting the local identity of the crystalline structures. The variation of the band gap from 2.2 eV for 3C-SiC to 3.0 eV for 6H-SiC, and 3.3eV for 4H-SiC is caused by changes of the conduction band alone as reflected by the unoccupied LPDOS measured by SXA. Additionally, by resonantly excited SXE information on the band dispersion and the local symmetry character of the valence states is obtained. © 1999 The American Physical Society.