Electronic structure of (110) Ge-GaAs superlattices and interfaces

Abstract

Ab initio energy-band calculations have been carried out for (110) Ge-GaAs superlattices containing 16 and 24 atoms per unit cell. Using the linear-combination-of-muffin-tin-orbitals method, the energy-level spectrum and local density of states were determined at selected points in the reduced zone. In agreement with earlier experimental findings, we find no evidence for well-defined localized interface states in the forbidden band. © 1978 The American Physical Society.