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Electronic Mobility in Semiconductor Heterostructures
Abstract
Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-GaAlAs heterojunctions. Copyright © 1986 by The Institute of Electrical and Electronics Engineers, Inc.
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