Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-GaAlAs heterojunctions. Copyright © 1986 by The Institute of Electrical and Electronics Engineers, Inc.
T.N. Morgan
Semiconductor Science and Technology
E. Burstein
Ferroelectrics
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
R. Ghez, J.S. Lew
Journal of Crystal Growth