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Publication
Applied Physics Letters
Paper
Electron tunneling from channel to gate
Abstract
A study was performed on electron tunneling from channel to gate. A general treatment based on the Gamow formulation of tunneling escape through an enclosing barrier was developed. Analysis was performed on the escape of electrons from the conducting channel of a field effect transistor through the barrier layer into the gate. The tunneling rate was calculated from the computed wave function of the quantum levels.