Conference paper
A tunnelling formalism
Peter J. Price
Semiconductor Science and Technology
A study was performed on electron tunneling from channel to gate. A general treatment based on the Gamow formulation of tunneling escape through an enclosing barrier was developed. Analysis was performed on the escape of electrons from the conducting channel of a field effect transistor through the barrier layer into the gate. The tunneling rate was calculated from the computed wave function of the quantum levels.
Peter J. Price
Semiconductor Science and Technology
Peter J. Price
Physical Review B
Peter J. Price
Physica B+C
Peter J. Price
Physical Review B