Abstract
The properties of poly-(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one- and half-micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with SiO2. Also, a method for producing high-resolution, defect-free masks through methacrylate resist is presented. © 1969, The Electrochemical Society, Inc. All rights reserved.