M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
The mobility of electrons in p-type GaAs, μnP has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μnP =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm-3. At 77 K, μnP =6000 cm2/(V s). The room-temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n-type material.
M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
D.J. Pearson, S.K. Reynolds, et al.
ISSCC 1995
M. Heiblum, M.I. Nathan, et al.
Surface Science
W.P. Dumke
Solid-State Electronics