About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Synthetic Metals
Paper
Electron injection into an Alq3 single-layer organic light-emitting diode
Abstract
Electric field and temperature-dependent electron injection studies have been performed in an aluminum (Al)tris(8-hydroxy-quinolinolato)aluminum (Alq3)/magnesium (Mg):silver (Ag) single-layer organic light-emitting diode (OLED). Semiconductor textbook theories, such as Fowler-Nordheim (FN) model for tunneling injection or Richardson-Schottky (RS) model for thermionic emission cannot account for the experimentally observed dependence of the injection current on electric field and temperature. Excellent agreement with experiment is provided by a Monte Carlo simulation of carrier injection from a metal into an organic dielectric with random hopping sites.