Publication
Physical Review B
Paper

Electron energy levels in GaAs-Ga1-xAlxAs heterojunctions

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Abstract

Calculated results for energy levels of electrons in GaAs-Ga1-xAlx As heterojunctions are presented and their sensitivity to various parameters including acceptor doping level in the GaAs, heterojunction barrier height, effective-mass and dielectric-constant discontinuities, interface grading, and ambient temperature is examined. © 1984 The American Physical Society.

Date

15 Jul 1984

Publication

Physical Review B

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