About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Electron energy levels in GaAs-Ga1-xAlxAs heterojunctions
Abstract
Calculated results for energy levels of electrons in GaAs-Ga1-xAlx As heterojunctions are presented and their sensitivity to various parameters including acceptor doping level in the GaAs, heterojunction barrier height, effective-mass and dielectric-constant discontinuities, interface grading, and ambient temperature is examined. © 1984 The American Physical Society.