M. Eizenberg, R.D. Thompson, et al.
Journal of Applied Physics
Thin layers of Nb, 100-400 Å thick, were grown by electron beam evaporation on (100)GaAs substrates in a molecular beam epitaxy system. The crystallographic relationship between deposit and substrate was monitored in situ by reflection high-energy electron diffraction, and after deposition by transmission electron microscopy and grazing-incidence x-ray diffraction. In spite of the large lattice mismatch (17%) and the low deposition temperature (40-400°C), a quite well oriented deposit with the orientation (100)Nb∥(100)GaAs and [001]Nb∥[011]GaAs was obtained for a substrate temperature of ∼170°C. Changing the substrate temperature from the optimum value of ∼170°C in either direction resulted in a gradual deterioration of the epitaxy.
M. Eizenberg, R.D. Thompson, et al.
Journal of Applied Physics
C.R.M. Grovenor, H.T.G. Hentzell, et al.
Acta Metallurgica
M. Heiblum, M.I. Nathan, et al.
IEEE T-ED
M. Heiblum, M.I. Nathan, et al.
Surface Science