Electric‐field‐induced room‐temperature doping in CuInSe₂

Abstract

The electric‐field‐induced doping of semiconductors to form permanently‐doped, stable device structures using strong electric fields at room temperature is reported. The figure is a secondary electron image of two gold electrodes contacting the surface of the CuInSe2 sample. Electric‐field application has resulted in the contact becoming ohmic (superimposed trace) indicating that an internal doping profile has been created. (Figure Presented.) Copyright © 1992 Verlag GmbH & Co. KGaA, Weinheim