We report the results of measurement and analysis of the electrical conductivity as a function of temperature and anneal for amorphous silicon films. The resistivity of the films between 77 and 300°K increasesc with annealing. Refractory electrodes were used. The extrapolated portions of T- 1 4 fits to the log of the conductivity give physically unreasonable parameters for the T- 1 4 formula. © 1972.