Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
We report the results of measurement and analysis of the electrical conductivity as a function of temperature and anneal for amorphous silicon films. The resistivity of the films between 77 and 300°K increasesc with annealing. Refractory electrodes were used. The extrapolated portions of T- 1 4 fits to the log of the conductivity give physically unreasonable parameters for the T- 1 4 formula. © 1972.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
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Surface Review and Letters
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SPIE AeroSense 1997
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings