About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Materials Science and Engineering
Paper
Effects of tin ion and nitrogen ion implantation on the oxidation of titanium
Abstract
The high temperature oxidation of ion-implanted titanium was studied using the scanning electron microscopy, X-ray photoelectron spectroscopy and Rutherford back-scattering techniques. The specimens were implanted with either tin ions (Sn+) or nitrogen ions (N2+) or a combination of the two, to doses of between 1015 and 1017 ions cm-2. The implantation energies were 200 keV for tin ions and 200 or 400 keV for nitrogen ions. The specimens, treated and untreated, were oxidized in air at 500 °C for 100 h. The combination of nitrogen and tin ions was found to increase the thickness of the nitride-oxide film on the titanium surface by four orders of magnitude and to increase the hardness significantly. Nitrogen ions alone produced a more uniform oxide layer but the thickness of the layer was unchanged. The implantation of tin ions alone led to a reduction in the oxidation of titanium by the formation of SnO2. The results are discussed in terms of well-established mechanisms of the oxidation of titanium, in which oxygen diffuses into the metal along anion vacancies of the rutile lattice. © 1987.