Peter Madakson, Joyce C. Liu
Journal of Applied Physics
Detailed analysis of a buried layer of GaAs in 〈100〉 Si was carried out using electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling. The layer was formed by 200 keV dual ion implantation of Ga plus As ions, followed by furnace annealing at 600 and 950°C. It consists of GaAs particles which are surrounded by fully recrystallized silicon. Beneath it is a dislocation network, made up of a mixture of edge and screw dislocations.
Peter Madakson, Joyce C. Liu
Journal of Applied Physics
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IEEE Electron Device Letters
Catherine Dubourdieu, John Bruley, et al.
Nature Nanotechnology
Wanki Kim, Robert L. Bruce, et al.
VLSI Technology 2019