Qitao Hu, Si Chen, et al.
Science Advances
This letter presents a systematic study of how the substrate bias (Vsub) modulation affects the current-voltage (I-V) characteristics and low-frequency noise (LFN) of lateral bipolar junction transistors (LBJTs) fabricated on a silicon-on-insulator (SOI) substrate. The current gain (β) of npn LBJTs at low base voltage can be greatly improved by a positive Vsub as a result of enhanced electron injection into the base near the buried oxide (BOX)/silicon interface. However, an excessive positive Vsub may also adversely affect the LFN performance by amplifying the noise generated as a result of carrier trapping and detrapping at that interface. Our results provide a practical guideline for improving both β and the overall noise performance when using our LBJT as a local signal amplifier.
Qitao Hu, Si Chen, et al.
Science Advances
Da Zhang, Xindong Gao, et al.
Applied Physics Letters
Zhen Zhang, Bin Yang, et al.
Applied Physics Letters
Da Zhang, Paul Solomon, et al.
Sensors and Actuators, B: Chemical