Effects of reactive ion etching on chemical vapor deposition

Abstract

Silicon surfaces were exposed to reactive ion etching with CCl 2F2, followed by low pressure chemical vapor deposition of silicon nitride. Examination with transmission electron microscopy shows a 5-nm homogeneous layer with interfacial roughness about the order of the layer thickness between the nitride and the silicon substrate. Analysis with spatially resolved electron energy loss scattering indicates that this phase is Si 2N2O. The causes for the formation of this layer and its implication on very large scale integration technology are discussed.