PaperTime-of-flight measurements of minority-carrier transport in p-siliconD.D. Tang, F. Fang, et al.Applied Physics Letters
PaperVariation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layersA. Hartstein, F. FangPhysical Review B
PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science