M. Kawasaki, P. Chaudhari, et al.
Applied Physics Letters
We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.
M. Kawasaki, P. Chaudhari, et al.
Applied Physics Letters
J. Doyle, P. Chaudhari, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
R. Gross, P. Chaudhari, et al.
Physical Review B
P. Chaudhari, J.W. Matthews
Journal of Applied Physics