Publication
Applied Physics Letters
Paper

Effects of ion implantation on the structure of amorphous germanium

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Abstract

We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.

Date

08 Aug 2008

Publication

Applied Physics Letters

Authors

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