Paper
Spin-Valve RAM Cell
D.D. Tang, P.-K. Wang, et al.
IEEE Transactions on Magnetics
Experiments were performed on n+-p-n and p+-n+-p transistors to examine the effect of boron impurity compensation on the hole current injected into the heavily arsenic-doped n-type silicon. The result shows that the impurity compensation significantly enhances the hole current only at low temperature, and has little effect at room or higher temperatures. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.
D.D. Tang, P.-K. Wang, et al.
IEEE Transactions on Magnetics
D.D. Tang
IEEE T-ED
C.T. Chuang, G.P. Li, et al.
ECS Meeting 1984
Alwin E. Michel
Nuclear Inst. and Methods in Physics Research, B