Effects of Impurity Compensation on Injection Current in Si Bipolar Transistors

Abstract

Experiments were performed on n+-p-n and p+-n+-p transistors to examine the effect of boron impurity compensation on the hole current injected into the heavily arsenic-doped n-type silicon. The result shows that the impurity compensation significantly enhances the hole current only at low temperature, and has little effect at room or higher temperatures. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.