Wai Lee, S.E. Laux, et al.
IEDM 1989
Experiments were performed on n+-p-n and p+-n+-p transistors to examine the effect of boron impurity compensation on the hole current injected into the heavily arsenic-doped n-type silicon. The result shows that the impurity compensation significantly enhances the hole current only at low temperature, and has little effect at room or higher temperatures. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.
Wai Lee, S.E. Laux, et al.
IEDM 1989
D.D. Tang, F. Fang, et al.
Applied Physics Letters
T.O. Sedgwick, Alwin E. Michel, et al.
Journal of Applied Physics
C.Y. Wong, Alwin E. Michel, et al.
Journal of Applied Physics