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JVSTA
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Effects of biased cosputtering on resistivity and step coverage in tungsten silicide films

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Abstract

Electrical resistivity and step coverage on thick oxide steps of various slopes were examined in tungsten silicide films sputter deposited by multilayering of W and Si utilizing magnetron targets. The desired composition was obtained by adjusting power levels to the targets and bias voltage. A broad minimum in electrical resistivity was obtained with bias voltage ranging from — 40 to — 80 V. Typical resistivity in films of 2500 A thickness after annealing at 1000 °C was 52–66 μΩ cm when deposited on poly-Si substrates. The effect of bias was found to produce films with much lower levels of impurity such as N, O, C, and H and the sputtering gas Ar. Proper bias voltage (— 50 V) was necessary to achieve good step coverage on thick oxide step with various slopes. Zero-bias sputtering provided minimum step coverage, while too high bias (— 100 V) led to poor step coverage and formation of rounded corners and faceting. © 1985, American Vacuum Society. All rights reserved.

Date

01 Jan 1985

Publication

JVSTA

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