Publication
Physical Review B
Paper

Effect of pressure on the electrical resistance of EuO

View publication

Abstract

The electrical resistivity of EuO has been measured from room temperature to 70 K and at pressures up to 250 kbar. A semiconductor-to-semiconductor transition is observed around 140 kbar at room temperature, and the conduction remains activated with a narrow gap up to 250 kbar. The magnetic transition temperature is observed to rise rapidly with pressure below 100 kbar but to saturate near 200 K in the 100 250-kbar range. © 1987 The American Physical Society.

Date

01 Jun 1987

Publication

Physical Review B

Authors

Topics

Share