Publication
Applied Physics Letters
Paper

Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

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Abstract

Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.

Date

01 Dec 1990

Publication

Applied Physics Letters

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