Publication
Journal of Applied Physics
Paper

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

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Abstract

The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.

Date

01 Dec 1983

Publication

Journal of Applied Physics

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