S.S. Lu, K.R. Lee, et al.
Surface Science
The effect of substrate temperature and As/Ga flux ratio on the incorporation of Si as a dopant in GaAs grown by molecular beam epitaxy has been studied by means of low-temperature photoluminescence (PL) measurements. It is shown that the acceptor character of Si is enhanced as the substrate temperature increases from 590 to 720v°C. The PL results suggest that the amount of Si self-compensation decreases when the atomic flux ratio increases from 2 to 6.
S.S. Lu, K.R. Lee, et al.
Surface Science
A. Alexandrou, J.A. Kash, et al.
Physical Review B
C. Tejedor, J.M. Calleja, et al.
Physical Review B
H. Ohno, L. Esaki, et al.
Applied Physics Letters