Effect of developer composition on photoresist performance

Abstract

A series of experiments have been carried out to define how developer composition affects the performance of a positive photoresist. The relations between resist dissolution rates and the concentrations of sodium ion, hydroxide ion and buffer ions have been examined. An equation that relates the dissolution rate of unexposed photoresist to the concentration of sodium ion and hydroxide ion has been derived. The major compositions of several commercial developers are described. The lithographic performance of resist processed in these developers has been compared by use of characteristic curves. There is little difference in resist performance observed in the different developers when compared under equivalent conditions. © 1984 SPIE.