Publication
Physical Review
Paper

Effect of band tails on stimulated emission of light in semiconductors

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Abstract

The dependence of the stimulated emission of radiation in semiconductors on temperature and on impurity concentration has been calculated using a Kane model with a Gaussian band tail for the density of states, and an optical model with a constant matrix element and no selection rule for the radiative transitions. The screening length and the characteristic energies for the widths of the conduction- and valence-band tails are calculated by a self-consistent procedure, and the calculation has no adjustable parameters. Numerical results are obtained using parameters appropriate for GaAs injection lasers. The presence of band tails leads to a more nearly linear dependence of gain on excitation level, in better agreement with experiment, than did the calculation without band tails by Lasher and Stern. Increasing impurity concentration leads to a weaker temperature dependence of the excitation rate required to reach a given gain. © 1966 The American Physical Society.

Date

05 Aug 1966

Publication

Physical Review

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