K. Rim, J.O. Chu, et al.
VLSI Technology 2002
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
K. Rim, J.O. Chu, et al.
VLSI Technology 2002
G. Northrop, P.M. Mooney
Journal of Electronic Materials
S. Tiwari, F. Rana, et al.
DRC 1995
K. Ismail, F. Legoues, et al.
Physical Review Letters