J.L. Jordan-Sweet, P.M. Mooney, et al.
MRS Fall Meeting 1994
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
J.L. Jordan-Sweet, P.M. Mooney, et al.
MRS Fall Meeting 1994
S. Tiwari
GaAs IC 1984
C.E. Murray, I.C. Noyan, et al.
MRS Proceedings 2003
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003