P.M. Mooney, L. Tilly, et al.
Journal of Applied Physics
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
P.M. Mooney, L. Tilly, et al.
Journal of Applied Physics
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
P.M. Mooney, K. Rim, et al.
Solid-State Electronics
G. Burns, M.I. Nathan
Proceedings of the IEEE