H.T. Yang, P.M. Mooney
Journal of Applied Physics
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
H.T. Yang, P.M. Mooney
Journal of Applied Physics
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
D.E. Eastman, C.B. Stagarescu, et al.
Physical Review Letters
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