Publication
Journal of Applied Physics
Paper

DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors

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Abstract

DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.

Date

01 Dec 1987

Publication

Journal of Applied Physics

Authors

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