Publication
Applied Physics Letters
Paper

Discovery of anomalous base regions in transistors

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Abstract

The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.

Date

16 Oct 2003

Publication

Applied Physics Letters

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