A.J. Kellock, M.H. Tabacniks, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.
A.J. Kellock, M.H. Tabacniks, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Chin-An Chang, J.E.E. Baglin, et al.
Applied Physics Letters
J.A. Cairns, C.W. Keep, et al.
Applied Physics Letters
R.T. Hodgson, J.E.E. Baglin, et al.
Applied Physics Letters