MRS Internet Journal of Nitride Semiconductor Research

Direct SIMS determination of the InxGa1-xN mole fraction

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We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15%.