About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
MRS Internet Journal of Nitride Semiconductor Research
Paper
Direct SIMS determination of the InxGa1-xN mole fraction
Abstract
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15%.
