Direct optical observation of the subsidiary X1c conduction band and its donor levels in InP

Abstract

Zero-phonon and phonon-assisted optical transitions from the 1c conduction band to the subsidiary X1c conduction band and its donor levels have been observed in InP at 8°K. The X1c-1c interband energy is measured at 9605 meV, and the binding energies of donors associated with the subsidiary X1c band are found to be 106 and 175 meV (5 meV) for Te and Si, respectively. © 1972 The American Physical Society.