Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A ZnS ac thin film electroluminescence device can exhibit a brightness vs. voltage hysteresis loop or "memory effect". We show that this "memory effect" is associated with the filamentary nature of the dissipative current. The filaments show a bistability in their conductive state, i.e., the nature of the "ac negative resistance" involved is current controlled. Experimental results on single filament switching under voltage, pulse width and light address are presented. © 1979.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics