A.M. Tyryshkin, S.A. Lyon, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Normally unoccupied adsorbate-induced states within the GaAs band gap were studied by measurement of ultraviolet-photoemission spectra from pulsed-laser-excited surfaces. Strikingly similar discrete structures within the gap were observed for submonolayer coverages of both chemisorbed oxygen and gold. The implications of these results for the understanding of Fermi-level pinning at interfaces are discussed. © 1986 The American Physical Society.
A.M. Tyryshkin, S.A. Lyon, et al.
Physica E: Low-Dimensional Systems and Nanostructures
T. Srinivasan, H. Egger, et al.
Applied Physics B Photophysics and Laser Chemistry
R. Haight, Dennis Hayden, et al.
BACUS Symposium on Photomask Technology and Management 1998
R. Haight, M. Baeumler
Physical Review B