R. Ludeke
Solid State Communications
Ballistic-electron-emission spectroscopy on Si(111)-(7×7) patches in pinholes of thin NiSi2 films on n-type Si(111) reveals collector currents as high as 210% of the tunneling current at a tip bias of 10 V. This electron multiplication is assigned to impact ionization in Si. Its quantum yield up to 7 eV kinetic energy is extracted from the spectra and compared to recent thoeretical results. © 1994 The American Physical Society.
R. Ludeke
Solid State Communications
H.J. Wen, R. Ludeke
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
G. Jezequel, A. Taleb-lbrahimi, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R. Ludeke, A. Bauer, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures