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Publication
Applied Physics Letters
Paper
Diffusion of gold in silicon: A new model
Abstract
Experimental results from the diffusion of Au in Si, which could not be explained before, in terms of the Frank-Turnbull mechanism involving vacancies, can be quantitatively understood with the assumption that the equilibrium between interstitial and substitutional Au is established via Si self-interstitials. The results suggest that these defects dominate diffusion in Si.