About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Dielectric response in p-type silicon: Screening and band-gap narrowing
Abstract
Some physical effects that arise due to large impurity concentrations in p-type semiconductors are discussed. This consists of a detailed analysis of the screening of static impurities and also band-gap narrowing in p-type silicon. A finite-temperature dielectric-response formalism is used together with a 6×6 Hamiltonian operator to describe the hole-energy eigenstates. A comparative study between our results and a Thomas-Fermi model generalized for the same valence-band structure is also presented. It is found that at high doping the Thomas-Fermi approximation overestimates the impurity screening except at very large distances where the Thomas-Fermi potential exhibits a greater long-range tail. Calculations of the band-gap narrowing in p-type silicon are performed using the same dielectric-response function and are shown to be in good agreement with experiment at both 20 and 300 K. © 1993 The American Physical Society.