David C. Keezer, Chirag S. Patel, et al.
IEEE Transactions on Electronics Packaging Manufacturing
Paper
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET
Abstract
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects. © 1996 IEEE.
Related
Muhannad S. Bakir, Bing Dang, et al.
ECTC 2007
James R. Pfiester, John D. Shott, et al.
IEEE T-ED
Gang Huang, Muhannad Bakir, et al.
IEEE Topical Meeting EPEPS 2007