Device modeling of long-channel nanotube electro-optical emitter

Abstract

We present a simple analytic model of long single-wall nanotube electro-optical emitters, along with experimental measurements using improved devices with reduced hysteresis. The model describes well the voltage-controlled motion of the emission spot, and provides a clear picture of the physical mechanism of device operation. It also indicates that the electric field is strongly enhanced at the emission spot, and that device performance can be greatly improved by the use of thinner gate oxides. © 2005 American Institute of Physics.