About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ISCAS 2012
Conference paper
Design of ring oscillator structures for measuring isolated NBTI and PBTI
Abstract
Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency or threshold voltage shifts. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including beat frequency sensing circuitry have been designed in a 0.9V, 45nm SOI technology. © 2012 IEEE.